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| TFDU2201 Vishay Semiconductors Low Profile Transceiver Module PIN Photodiode and Infrared Emitter Description The miniaturized TFDU2201 is an ideal PIN photodiode transmitter combination in a unique package for applications in telecommunications like mobile phones and pagers. The device is mechanically designed for lowest profile with a height of only 2.8 mm. The device is designed to be compatible to the IrDA standard when using an external receiver IC and IRED driver. 18170 Features * Package dimension: L 7.3 mm x W 4.55 mm x H 2.75 mm * SMD side view * Fast PIN Photodiode for SIR and FIR applications * Detector with high efficiency and high speed at low bias voltage * Only 30 mA IRED peak current during transmission for IrDA SIR low power standard * Lead(Pb)-free device * Device in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications * Mobile Phones, Pagers, Personal Digital Assistants (PDA) * Handheld battery operated equipment Parts Table Part TFDU2201-TR1 TFDU2201-TR3 Description Orientated in carrier tape for side view mounting Orientated in carrier tape for side view mounting 750 pcs. 2250 pcs. Qty / Reel Pin Description Pin Number 1 2 3 4 5 6 7 8 Function IRED GND IRED GND IRED Anode NC NC NC Danode Dcathode Detector anode Detector cathode Description IRED cathode, ground, to be used as heat sink IRED cathode, ground, to be used as heat sink IRED anode, to be driven by a current source I/O Active Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 1 TFDU2201 Vishay Semiconductors Pinout TFDU2201 weight 100 mg 18228 Absolute Maximum Ratings Parameter Photo pin diode, reverse voltage range Photo pin diode, reverse photo current Average IRED current Repetitive pulsed IRED current IRED, reverse voltage range Power dissipation Juntion temperature Ambient temperature range (operating) Storage temperature range Soldering temperature Virtual source size t = 20 s @ 215 C, see Vishay Telefunken IrDA Design Guide Method: (1 - 1/e) encircled energy d see Figure 3 < 90 s, ton < 20 % IIRED(DC) IIRED(RP) VrIRED Ptot TJ Tamb Tstg - 25 - 40 215 2 - 0.3 Test Conditions Symbol Vr Min - 0.3 Typ. Max 12 10 100 550 5 200 125 + 85 + 85 240 Unit V mA mA mA V mW C C C C mm Compatible to Class 1 opration of IEC 60825 or EN60825 with worst case IrDA SIR pulse pattern, 115.2 kbit/s Electrical Characteristics Transceiver Tested for the following parameters (T = 25 C, unless otherwise stated) Parameter Supported data rates Test Conditions base band Symbol Min 9.6 Typ. Max 4000 Unit kbit/s www.vishay.com 2 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Optoelectronic Characteristics Receiver Tested for the following parameters (T = 25 :C, unless otherwise stated) Parameter Spectral sensitivity Bias voltage range, detector Reverse leakage current Spectral bandwith Max. operating irradiance Rise time @ load : R = 50 Fall time @ load : R = 50 | | 90 C, VCC = 2 V Vr = 2 V, = 875 nm Vr = 2 V, = 875 nm Ee, max tr tr 800 8000 15000 40 40 Test Conditions | | 15 , Vr = 2 V, = 875 nm Symbol S VRev 0.2 950 Min 1.0 Typ. 1.2 Max 1.8 12 Unit nA/(mW/m2) V nA nm W/m2 ns ns Transmitter Tested for the following parameters (T = 25 :C, unless otherwise stated) Parameter Forward current operating condition for low power IrDA operation Output radiant intensity Test Conditions Ie = 4 to 28 mW/sr in | | 15 Symbol IF1 Min Typ. 30 Max Unit mA | | 15 , IF1 = 35 mA, 25 % duty cycle | | 15 , IF1 = 350 mA, 25 % duty cycle Ie Ie Vf p 4 35 1.2 880 8 14 mW/sr mW/sr Forward voltage Peak emission wavelength Spectral emission bandwith Optical rise/fall time If = 50 mA 1.45 900 45 38 V nm nm ns 2 MHz square wave signal (duty cycle 1 : 1) Recommended Solder Profile Solder Profile for Sn/Pb soldering Lead-Free, Recommended Solder Profile The TFDU2201 is a lead-free transceiver and qualified for lead-free processing. For lead-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 2 is Vishay's recommended profile for use with the TFDU2201 transceivers. For more details please refer to Application note: SMD Assembly Instruction. 240 220 200 180 Temperature (C) 10 s max. @ 230C 2C - 4C/s 160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 2C - 4C/s 120 s - 180 s 90 s max 14874 Time ( s ) Figure 1. Recommended Solder Profile for Sn/Pb soldering Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 3 TFDU2201 Vishay Semiconductors 275 250 225 200 175 Temperature/C 150 T 255C for 10 s....30 s Tpeak = 260C T 217C for 70 s max 30 s max. 125 100 75 50 25 0 0 50 100 150 Time/s 200 250 300 350 90 s...120 s 70 s max. 2C...4C/s 2C...3C/s 19260 Figure 2. Solder Profile, RSS Recommendation 280 260 240 220 200 180 Temperature/C 160 140 120 100 80 60 40 20 0 0 50 100 150 Time/s 200 250 300 Time above 217C t 70 s Time above 255C t 30 s Peak temperature Tpeak = 260C 1.3C/ <4C/s Tpeak = 260C max. <2C/s Figure 3. RTS Recommendation A ramp-up rate less than 0.9C/s is not recommended. Ramp-up rates faster than 1.3C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. www.vishay.com 4 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Current Derating Diagram 600 Peak Operating Current ( mA ) 500 400 300 200 100 0 -40 -20 0 Current derating as a function of the maximum forward current of IRED. Maximum duty cycle: 25%. 14875 20 40 60 80 100 120 140 Temperature ( C ) Figure 4. Current Derating Diagram Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 5 TFDU2201 Vishay Semiconductors Package Dimensions in mm 7 x 0.8 0.5 2.3 1 0.8 8 14484 www.vishay.com 6 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Reel Dimensions W1 Reel Hub W2 14017 Tape Width mm 24 A max. mm 330 N mm 60 W1 min. mm 24.4 W2 max. mm 30.4 W3 min. mm 23.9 W3 max. mm 27.4 Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 7 TFDU2201 Vishay Semiconductors Tape Dimensions in mm 18258_1 www.vishay.com 8 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 9 |
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